Description
- Form Factor: M.2 2280
- Interface: PCIe 3.0 x4, NVMe 1.4
- Capacity: 500GB
- Controller: Samsung Pablo
- NAND Type: Samsung V-NAND 3-bit MLC (TLC)
- DRAM: None (Uses HMB – Host Memory Buffer)
- Sequential Read Speed: Up to 3,100 MB/s
- Sequential Write Speed: Up to 2,600 MB/s
- Random Read (4KB, QD32): Up to 400,000 IOPS
- Random Write (4KB, QD32): Up to 470,000 IOPS
- Endurance (TBW – Total Bytes Written): 300 TBW
- MTBF (Mean Time Between Failures): 1.5 million hours
- Power Consumption:
- Idle: 45 mW
- Active: 3.7W (average), 5.3W (maximum burst)
- Features:
- Intelligent TurboWrite
- HMB (Host Memory Buffer) Technology
- TRIM, S.M.A.R.T., GC (Garbage Collection)
- AES 256-bit encryption, TCG Opal 2.0, IEEE 1667
- Operating Temperature: 0°C – 70°C
- Warranty: 5 Years Limited
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